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| SMD Type Silicon NPN Epitaxial 2SC2619 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 30 5 100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol Testconditons Min 30 30 5 0.5 0.5 60 200 1.1 0.75 230 3.5 5 V V MHz pF dB Typ Max Unit V V V iA iA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ICBO IEBO hFE VCB = 20V, IE=0 VEB = 2V, IC=0 VCE = 12V , IC = 2mA VCE(sat) IC = 10mA , IB = 1mA VBE fT Cob NF VCE = 12V , IC = 2mA VCE = 12V , IC = 2mA VCB = 10V , IE=0, f = 1MHz VCE = 6V, IC = 2mA, f = 1MHz, Rg = 500U hFE Classification Marking hFE FB 60 120 FC 100 200 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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